型号 IPG20N06S3L-35
厂商 Infineon Technologies
描述 MOSFET 2N-CH 55V 20A TDSON-8
IPG20N06S3L-35 PDF
代理商 IPG20N06S3L-35
产品变化通告 Product Discontinuation 26/Nov/2010
标准包装 5,000
系列 OptiMOS™
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 55V
电流 - 连续漏极(Id) @ 25° C 20A
开态Rds(最大)@ Id, Vgs @ 25° C 35 毫欧 @ 11A,10V
Id 时的 Vgs(th)(最大) 2.2V @ 15µA
闸电荷(Qg) @ Vgs 23nC @ 10V
输入电容 (Ciss) @ Vds 1730pF @ 25V
功率 - 最大 30W
安装类型 表面贴装
封装/外壳 8-PowerTDFN
供应商设备封装 PG-TDSON-8-4(5.15x6.15)
包装 带卷 (TR)
其它名称 SP000396306
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